ds30122 rev. 5 - 2 1 of 4 MMDT2227 www.diodes.com diodes incorporated MMDT2227 complementary npn / pnp small signal surface mount transistor complementary pair epitaxial planar die construction ultra-small surface mount package one 2222a-type npn, one 2907a-type pnp ideal for low power amplification and switching also available in lead free version characteristic symbol npn2222a unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current - continuous (note 1) i c 600 ma power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c features maximum ratings, npn2222a section @ t a = 25 c unless otherwise specified a m j l d b c h k g f c 2 b 1 e 1 e 2 b 2 c 1 mechanical data case: sot-363, molded plastic case material - ul flammability rating classification 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 4, on page 2 terminal connections: see diagram marking (see page 3): k27 ordering & date code information: see page 3 weight: 0.006 grams (approx.) note: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. short duration test pulse used to minimize self-heating effect. characteristic symbol pnp2907a unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5.0 v collector current - continuous (note 1) i c -600 ma power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c maximum ratings, pnp2907a section @ t a = 25 c unless otherwise specified note: e1, b1, and c1 = pnp2907a section, e2, b2, and c2 = npn2222a section. type marking indicates orientation. sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 8 all dimensions in mm c 2 b 1 e 1 e 2 b 2 c 1
ds30122 rev. 5 - 2 2 of 4 MMDT2227 www.diodes.com electrical characteristics, npn2222a section @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 2) collector-base breakdown voltage v (br)cbo 75 v i c = 10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 40 v i c = 10ma, i b = 0 emitter-base breakdown voltage v (br)ebo 6.0 v i e = 10 a, i c = 0 collector cutoff current i cbo 10 na a v cb = 60v, i e = 0 v cb = 60v, i e = 0, t a = 150 c collector cutoff current i cex 10 na v ce = 60v, v eb(off) = 3.0v emitter cutoff current i ebo 10 na v eb = 3.0v, i c = 0 base cutoff current i bl 20 na v ce = 60v, v eb(off) = 3.0v on characteristics (note 2) dc current gain h fe 35 50 75 100 40 50 35 300 i c = 100 a, v ce = 10v i c = 1.0ma, v ce = 10v i c = 10ma, v ce = 10v i c = 150ma, v ce = 10v i c = 500ma, v ce = 10v i c = 10ma, v ce = 10v, t a = -55 c i c = 150ma, v ce = 1.0v collector-emitter saturation voltage v ce(sat) 0.3 1.0 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma base-emitter saturation voltage v be(sat) 0.6 1.2 2.0 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma small signal characteristics output capacitance c obo 8pf v cb = 10v, f = 1.0mhz, i e = 0 input capacitance c ibo ?25pf v eb = 0.5v, f = 1.0mhz, i c = 0 current gain-bandwidth product f t 300 mhz v ce = 20v, i c = 20ma, f = 100mhz noise figure nf 4.0 db v ce = 10v, i c = 100 a, r s = 1.0k f = 1.0khz switching characteristics delay time t d 10 ns v cc = 30v, i c = 150ma, v be(off) = - 0.5v, i b1 = 15ma rise time t r 25 ns note: 1. valid provided that terminals are kept at ambient temperature. 2. pulse test: pulse width
300 s, duty cycle
2%. notes: 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number above. example: MMDT2227-7-f. device packaging shipping MMDT2227-7 sot-523 3000/tape & reel (note 3) ordering information
ds30122 rev. 5 - 2 3 of 4 MMDT2227 www.diodes.com characteristic symbol min max unit test condition off characteristics (note 2) collector-base breakdown voltage v (br)cbo -60 v i c = -10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -60 v i c = -10ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5.0 v i e = -10 a, i c = 0 collector cutoff current i cbo -10 na a v cb = -50v, i e = 0 v cb = -50v, i e = 0, t a = 125 c collector cutoff current i cex -50 na v ce = -30v, v eb(off) = -0.5v base cutoff current i bl -50 na v ce = -30v, v eb(off) = -0.5v on characteristics (note 2) dc current gain h fe 75 100 100 100 50 300 i c = -100a, v ce = -10v i c = -1.0ma, v ce = -10v i c = -10ma, v ce = -10v i c = -150ma, v ce = -10v i c = -500ma, v ce = -10v collector-emitter saturation voltage v ce(sat) -0.4 -1.6 v i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma base-emitter saturation voltage v be(sat) -1.3 -2.6 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma small signal characteristics output capacitance c obo 8.0 pf v cb = -10v, f = 1.0mhz, i e = 0 input capacitance c ibo ?30pf v eb = -2.0v, f = 1.0mhz, i c = 0 current gain-bandwidth product f t 200 mhz v ce = -20v, i c = -50ma, f = 100mhz switching characteristics turn-on time t on 45 ns i c = -150ma, v cc = -30v, i b1 = -15ma delay time t d 10 ns v cc = -30v, i c = -150ma, i b1 = -15ma rise time t r 40 ns electrical characteristics, pnp2907a section @ t a = 25 c unless otherwise specified note: 2. short duration test pulse used to minimize self-heating effect. month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd date code key k27 = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september k27 ym marking information notes: 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. device packaging shipping MMDT2227-7 sot-363 3000/tape & reel ordering information (note 3) year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw
ds30122 rev. 5 - 2 4 of 4 MMDT2227 www.diodes.com 1.0 5.0 20 10 30 0.1 10 1.0 50 capacitance (pf) reverse volts (v) fig. 1 (2222a) typical capacitance cobo cibo 0.001 0.01 1 10 0.1 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 . 0 i base current (ma) b fi g .2 ( 2222a ) t y pical collector saturation re g ion v collector-emitter voltage (v) ce i=1ma c i = 10ma c i = 30ma c i = 100ma c i = 300ma c 1.0 5.0 20 10 30 -0.1 -10 -1.0 -30 c, capacitance (pf) reverse volts (v) fig. 3 (2907a) typical capacitance cobo cibo i base current (ma) b fig. 4 (2907a) typical collector saturation region vc o llect o r-emitter v o ltage (v) ce 0.2 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.001 1 10 0.1 100 i=1ma c i=10ma c i=30ma c i = 100ma c i = 300ma c
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